Shouldering in B diffusion profiles in Si: Role of di-boron diffusion
نویسندگان
چکیده
The role of di-boron diffusion in evolution of B diffusion profiles has been investigated. We find that boron pair (Bs – Bi) diffusion can become as important as boron-interstitial pair (Bs – Sii) diffusion when both boron concentration and annealing temperature are very high, leading to concentration-dependent B diffusion. Our simulated B diffusion profiles with dramatic shouldering are in excellent agreement with experimental ones reported by Schroer et al. @Appl. Phys. Lett. 74, 3996 ~1999!# for high-temperature ~'1200 °C! postimplantion annealing of ultralow-energy ~'500 eV! implanted high-concentration (.10 cm) boron in silicon. © 2003 American Institute of Physics. @DOI: 10.1063/1.1619219#
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تاریخ انتشار 2003